PHOTOCONDUCTION IN POLY-GAMMA -ETHYL-D-GLUTAMATEKAMISAKO K; SASABE H.1975; REP. PROGR. POLYM. PHYS. JAP.; JAP.; DA. 1975; VOL. 18; PP. 567-570; BIBL. 2 REF.Article

ELECTRICAL PROPERTIES OF POLYACRYLAMIDE-CU⁺⁺ COMPLEX: EFFECT OF TREATMENT WITH I₂KAMISAKO K; TSURUOKA Y; SASABE H et al.1981; REP. PROG. POLYM. PHYS. JPN.; ISSN 0486-4476; JPN; DA. 1981; VOL. 24; PP. 351-354; BIBL. 3 REF.Article

SIMULATION OF TRANSIENT PHOTOCURRENT IN POLYMERS BY MULTIPLE TRAPPING MODELDEMURA T; KAMISAKO K; SASABE H et al.1981; REP. PROG. POLYM. PHYS. JPN.; ISSN 0486-4476; JPN; DA. 1981; VOL. 24; PP. 355-358; BIBL. 8 REF.Article

PULSED PHOTOCONDUCTION IN POLY-GAMMA -ETHYL-D-GLUTAMATE FILMSYATSUHASHI K; KAMISAKO K; SASABE H et al.1977; REP. PROGR. POLYM. PHYS. JAP.; JPN; DA. 1977; VOL. 20; PP. 625-628; BIBL. 2 REF.Article

ELECTRICAL CONDUCTIVITY OF CUI-DOPED POLYACRYLAMIDEKAMISAKO K; SHITO T; SASABE H et al.1981; REP. PROG. POLYM. PHYS. JPN.; ISSN 0486-4476; JPN; DA. 1981; VOL. 24; PP. 369-370; BIBL. 4 REF.Article

ELECTRICAL CONDUCTION OF POLYETHYLENE TELEPHTHALATE FILMSMATSUMOTO S; KAMISAKO K; SHINOHARA K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 1; PP. 37-41; BIBL. 11 REF.Article

ELECTRICAL CONDUCTION OF POLYSTYRENE FILMS.KAMISAKO K; AKIYAMA S; SHINOHARA K et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 11; PP. 1780-1786; BIBL. 15 REF.Article

PHOTOCONDUCTIVE PROPERTIES OF POLYMETHACRYLONITRILEKAMISAKO K; IRINO H; SASABE H et al.1977; REP. PROGR. POLYM. PHYS. JAP.; JPN; DA. 1977; VOL. 20; PP. 359-362; BIBL. 1 REF.Article

CONDUCTION EN COURANT ALTERNATIF DE QUELQUES POLYMERESKAMISAKO K; KOBAYASHI M; YUKI Y et al.1979; KOBUNSHI RONBUSHU; JPN; DA. 1979; VOL. 36; NO 10; PP. 639-645; ABS. ENG; BIBL. 17 REF.Article

Analysis of deposition rate distribution in the photo-CVD of a-Si by a unified reactor with a lampKAMISAKO, K; AOTA, K; TARUI, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 10, pp L776-L778, issn 0021-4922, 2Article

Minority-carrier trapping in Ga-doped multicrystalline Si wafersDHAMRIN, M; SCHMIGA, C; KAMISAKO, K et al.Solar energy materials and solar cells. 2006, Vol 90, Num 18-19, pp 3179-3186, issn 0927-0248, 8 p.Conference Paper

Doping properties of microcrystalline silicon prepared by mercury sensitized photochemical vapor depositionSUZUKI, K; KUROIWA, K; KAMISAKO, K et al.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 2, pp 227-231, issn 0721-7250Article

Influence of film thickness on structural properties of microcrystalline silicon filmsYOSHIOKA, Y; MATSUYAMA, Y; KAMISAKO, K et al.sans titre. 2002, pp 1266-1269, isbn 0-7803-7471-1, 4 p.Conference Paper

Etching and surface modification of GaAs by hydrogen radicals generated by hydrogen microwave afterglow microwave afterglow methodNAGAYOSHI, H; YAMAMOTO, Y; KAMISAKO, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 4A, pp L451-L454, issn 0021-4922, 2Article

Gas phase reaction kinetics in mercury-photosensitized decomposition of SiH₄KAMISAKO, K; IMAI, T; TARUI, Y et al.Japanese journal of applied physics. 1988, Vol 27, Num 6, pp 1092-1095, issn 0021-4922, 1Article

High-rate selective etching of a-Si:H using hydrogen radicalsNAGAYOSHI, H; YAMAGUCHI, M; KAMISAKO, K et al.Japanese journal of applied physics. 1994, Vol 33, Num 5A, pp L621-L623, issn 0021-4922, 2Article

Characterization of CVD-TiN films prepared with metalorganic sourceISHIHARA, K; YAMAZAKI, K; HAMADA, H et al.Japanese journal of applied physics. 1990, Vol 29, Num 10, pp 2103-2105, issn 0021-4922, 3 p., 1Article

IR absorption spectroscopic identification of electroactive and electroinactive polyaniline films prepared by the electrochemical polymerization of anilineOHSAKA, T; OHNUKI, Y; OYAMA, N et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1984, Vol 161, Num 2, pp 399-405, issn 0022-0728Article

Substrate dependence of crystlliization of silicon films prepared by hydrogen radical CVD methodKIMURA, K; SHIRASAWA, T; KOBAYASHI, N et al.sans titre. 2002, pp 1270-1273, isbn 0-7803-7471-1, 4 p.Conference Paper

High-density vacuum ultraviolet light source in windowless photochemical vapor deposition reactor and its application to a-Si:H depositionKUROIWA, K; YAMAZAKI, H; TSUCHIYA, S et al.Japanese journal of applied physics. 1992, Vol 31, Num 4B, pp L518-L520, issn 0021-4922, 2Article

Investigation on leakage current reduction of photo-CVD tantalum oxide films accomplished by active oxygen annealingTANIMOTO, S; MATSUI, M; KAMISAKO, K et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 1, pp 321-328, issn 0013-4651Article

Residual stress of a a-Si_1-xN_x:H films prepared by afterglow plasma chemical vapor deposition techniqueNAGAYOSHI, H; MORINAKA, H; KAMISAKO, K et al.Japanese journal of applied physics. 1992, Vol 31, Num 7A, pp L867-L869, issn 0021-4922, 2Article

Tantalum oxide films formed by UV photo-CVD using ozone and TaCl₅TANIMOTO, S; MATSUI, M; AOYAGI, M et al.Japanese journal of applied physics. 1991, Vol 30, Num 3, pp L330-L333, issn 0021-4922, p.AArticle

Passivation property of SiN_X:H/SiO₂ double layer formed by ammonia microwave remote plasma CVD methodFUSHIMI, Y; WAKE, T; FUJIWARA, M et al.sans titre. 2002, pp 375-378, isbn 0-7803-7471-1, 4 p.Conference Paper

SiN_x:H/SiO₂ double-layer passivation with hydrogen-radical annealing for solar cellsNAGAYOSHI, H; IKEDA, M; YAMAGUCHI, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 9A, pp 5688-5692, issn 0021-4922, 1Article